SMMBTH10-4LT3G دیتاشیت

SMMBTH10-4LT3G

مشخصات دیتاشیت

نام دیتاشیت SMMBTH10-4LT3G
حجم فایل 50.018 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi SMMBTH10-4LT3G
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): -
  • Power Dissipation (Pd): 225mW
  • Transition Frequency (fT): 800MHz
  • DC Current Gain (hFE@Ic,Vce): 120@4mA,10V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 25V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@4mA,400uA
  • Package: SOT-23(TO-236)
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 800MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 4mA, 10V
  • Current - Collector (Ic) (Max): -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
  • Base Part Number: SMMBTH
  • detail: RF Transistor NPN 25V 800MHz 225mW Surface Mount SOT-23-3 (TO-236)

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